High voltage SPICE models negate independent discrete models

Fairchild has introduced models including IGBTs (FS Trench 650V), Super Junction FETs (600 and 800V SuperFET MOSFETs) and HV Diodes (STEALTH I, II diodes and HyperFast series).

In the past, high voltage discrete device and product development consisted of a long, serial approach where technologies were developed in TCAD, physical parts fabricated and packaged, measurements performed and an iterative calibration cycle launched.

As designers simulate application circuits with SPICE and not TCAD, application simulations are often performed and calibrated very late in the technology development process when the silicon-based SPICE model is finally available. Any new sized part in the technology or technology adjustment required another round of TCAD simulations, device fabrication, and measurements before a corresponding discrete SPICE model became available for application simulation.

Now, newly developed physically-based, scalable SPICE models that encapsulate the process technology are at the forefront of the design cycle. Designers, through the SPICE model, can simulate product performance prior to device fabrication, reducing design and fabrication cycles, leading to lower costs and faster time to market.

Chris Allexandre, Senior Vice President, Worldwide Sales and Applications, Fairchild Semiconductor, comments: “At Fairchild, we are focused on providing excellent high-voltage design enablement platforms. These new SPICE models enable virtual prototyping, helping our customers solve problems faster and develop new products with the shortest time to market, and are part of our commitment to provide amazing service that delivers measureable value for our customers.”