Plasma systems enable high processing for 3D and wafer-level assembly

For wafer cleaning, the MesoSPHERE plasma system removes contamination prior to wafer bumping, organic contamination, fluorine and other halogen contamination, and metal and metal oxides. Plasma improves spun-on film adhesion and cleans metallic bond pads.

For wafer etching, the MesoSPHERE plasma system descums wafers of residual photoresist and BCB, pattern dielectric layers for redistribution, strip/etch photoresist, enhances adhesion of wafer applied materials, removes excess wafer applied mould /epoxy, enhances adhesion of gold solder bumps, destresses wafer to reduce breakage, improves spun-on film adhesion, and cleans aluminium bond pads.

The MesoSPHERE's chamber design and control architecture enable short plasma cycle times with very low overhead, maximising throughput and minimising cost of ownership. Plasma confinement technology uses a ring to isolate and focus plasma so it's distributed directly above the wafer, minimising undesired secondary reactions. Process temperatures can be kept low because the ring increases etch rate capability without increasing the electrode temperature or adding bias to the chuck.

An innovative handling system transfers round or square substrates and frame or bonded carriers. The modular design allows capacity increase on a per plasma chamber basis. Equipment front end module (EFEM) integration supports from one to four plasma chambers. A pocket chuck design provides accurate substrate placement and centring, for additional process repeatability.

"A unique feature of the MesoSPHERE is the way we developed the isolation," explained Jonathan Doan, director of marketing for Nordson MARCH. "It allows our customers a method to perform advanced packaging without having to use an expensive carrier and it can be used with 300mm wafers on frames."