CoorsTek to unveil enhanced GaN-on-Silicon Epiwafers at ISPSD 2016

CoorsTek plan to display the integrated capabilities of CoorsTek and Covalent Materials (formerly Toshiba Ceramics, now CoorsTek KK) including:

• GaN-on-Si Epiwafers for power devices and integrated circuits (ICs)
• Aluminum nitride (AlN) substrates for hybrid circuits, and
• Engineered ceramic components for semiconductor processing equipment made from PureSiC CVD Silicon Carbide, PlasmaPure High-Purity Alumina, and other technical ceramics.

“The latest CoorsTek gallium nitride-on-silicon technology helps customers achieve higher device manufacturing yields and breakdown voltages based on lower defect densities and leakage current,” explains Jun Komiyama, PhD, R&D Manager at CoorsTek. “The shift from 150 mm to 200 mm diameter GaN-on-Si process is also improving the economics for power electronics in electric and hybrid automobiles, solar photovoltaic inverters, RF and microwave power, and more.”