Teledyne e2v HiRel new EP VHF to S-Band low noise amplifiers

These LNAs, developed on a 250 nm enhancement depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) process, are available in an 8-pin dual-flat no-lead (DFN) 2 mm x 2 mm x 0.75 mm plastic surface mount package.

Both LNAs leverage monolithic microwave integrated circuit (MMIC) design techniques and deliver exceptional performance. The TDLNA2050EP amplifier is ideal for S-band communications and delivers a gain of 17.5 dB from 2 GHz to 5 GHz, while maintaining a noise figure of less than 0.4 dB and output power (P1dB) of 19.5 dBm and should be biased at a VDD of +5.0 volts and IDDQ of 60 mA.

The TDLNA0430EP amplifier is ideal for VHF to S-band communications and delivers a gain of 21.5 dB from 0.03 GHz to 3 GHz, while maintaining a noise figure of less than 0.35 dB and output power (P1dB) of 18.5 dBm and should be biased at the same VDD of +5.0 volts and IDDQ of 60mA.

Both devices are well suited for communication systems, ensuring minimal noise and distortion that could otherwise degrade digital signals in environments with high radio signal power levels. Customer evaluation kits are available for both amplifiers.

“Today, we’re releasing two ultra-low noise amplifiers, optimised for military, avionics, and industrial applications,” said Mont Taylor, Vice President, and Business Development Manager at Teledyne e2v HiRel.

“With noise figures of less than 0.35 dB coupled with ease of use from a positive single supply voltage, we believe these new products will provide system designers with a superior solution for communication, phased array radar and avionics system applications.”