Boards evaluate GaN E-HEMT performance
Availability and full design support capabilities for a family of evaluation boards from GaN Systems have been announced by Richardson RFPD. The GS665XXX-EVBDB daughterboard evaluation kits consist of two GaN Systems 650 V GaN enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage.
The kits allow users to easily evaluate the GaN E-HEMT performance in any half-bridge topology, either with the GS665MB-EVB universal motherboard or the user’s own system design.
According to GaN Systems, additional key features of the new evaluation boards include vertical-mount style with height of 35 mm, which fits in the majority of 1U designs and allows evaluation of GaN E-HEMTs in traditional through-hole power supply boards, current shunt position for switching characterisation testing and universal form factor and footprint for all products.
Featured products
MAX17793
Analog Devices Inc.
3V to 80V, 3A, High-Efficiency, Synchronous Step-Down DC-DC Converter
| SKU: | MAX17793 |
|---|---|
| Stock: | 9316 |
| Cost: | $3.64 |
MAX22516
Analog Devices Inc.
IO-Link Data Link Controller with Transceiver and Integrated DC-DC
| SKU: | MAX22516 |
|---|---|
| Stock: | 8000 |
| Cost: | $5.42 |
