GaN transistors enable 5G Massive MIMO deployment
NXP’s recently launched portfolio of discrete Gallium Nitride (GaN) transistors to expand 5G Massive MIMO coverage is in stock at specialist RF distributor RFMW.
The transistors enable easy deployment of 5G Massive MIMO in urban and suburban areas.
NXP’s proprietary RF GaN technology is manufactured in its new Chandler (Arizona) fab.
This launch provides a GaN portfolio covering the 5G cellular bands between 2.3 and 4.0GHz.
A key benefit is that NXP’s GaN technology has a low-memory effect designed to maximise linearity and reduce Digital Pre-Distortion (DPD) complexity.
The portfolio covers 48V driver stages, allowing a single amplifier supply voltage for the lineup. Engineers can design high-efficiency power amplifiers with optimum power consumption, size, and weight for easier deployment.
The portfolio covers both driver and final stage discrete GaN transistors suitable for 10 Watt 32T32R and 5 Watt 64T64R Massive MIMO antennas.
Most transistors share the same DFN 7 x 6.5 package.
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