Vishay unveils 600 V E Series Power MOSFET

This latest device from the Vishay Siliconix line, the n-channel SiHR080N60E, reduces on-resistance by 27% and resistance times gate charge—a critical figure of merit for 600 V MOSFETs in power conversion—by 60%, whilst delivering higher current in a more compact form than previous D²PAK devices.

Vishay offers an extensive range of MOSFET technologies that facilitate every stage of the power conversion process, from high-voltage inputs to the low-voltage outputs essential for powering modern high-tech equipment. The SiHR080N60E, along with other devices in the fourth-generation 600 V E Series, seeks to enhance efficiency and power density in critical early stages of power system architecture—power factor correction (PFC) and subsequent DC/DC converter blocks. Potential applications include servers, edge computing, supercomputers, and data storage; UPS; high-intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.

The SiHR080N60E, measuring 10.42mm x 8mm x 1.65mm, is housed in the compact PowerPAK 8 x 8LR package, which offers a 50.8% smaller footprint and 66% lower height than the D²PAK. Its top-side cooling feature ensures superior thermal performance, with an exceptionally low junction to case (drain) thermal resistance of 0.25°C/W, allowing for 46% higher current than the D²PAK at the same resistance level, thereby significantly increasing power density. Additionally, the package's gullwing leads enhance temperature cycle capability.

Employing Vishay's advanced energy-efficient E Series superjunction technology, the SiHR080N60E features a low typical on-resistance of 0.074Ω at 10V and an ultra-low gate charge down to 42nC. The result is an industry-low FOM of 3.1Ω*nC, leading to reduced conduction and switching losses, thus saving energy and enhancing efficiency in power systems exceeding 2kW. For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET also provides low typical effective output capacitances Co(er) and Co(tr) of 79pF and 499pF, respectively. The package additionally includes a Kelvin connection to boost switching efficiency.

The device is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.