Vishay Siliconix Extends P-Channel TrenchFET Gen III Technology to Dual 12-V Power MOSFET; New Device Lowers On-Resistance Up to 32 % in 2-mm by 2-mm Footprint Area

With the SiA975DJ, Vishay extends its p-channel TrenchFET Gen III technology to dual 12-V power MOSFETS in the ultra-small PowerPAK SC-70 package for handheld electronics. The new device will be used for load, PA, and battery switches in game consoles and portable devices such as cell phones, smart phones, PDAs, and MP3 players.

For these devices, the lower on-resistance of the SiA975DJ translates into lower conduction losses, allowing the device to perform switching tasks with less power than any previous dual p-channel power MOSFETs on the market in ultra-small packages, thus prolonging battery life between charges. The MOSFET’s low on-resistance also means a lower voltage drop at peak currents to better prevent undervoltage lockout conditions with the IC/load. Alternatively, the designer may be able to use a lower-voltage battery.

The SiA975DJ offers an ultra-low on-resistance of 41 mΩ at 4.5 V, 60 mΩ at 2.5 V, and 110 mΩ at 1.8 V. The closest competing 20-V p-channel device with an 8-V gate-to-source rating features an on-resistance of 60 mΩ at a 4.5-V gate drive and 80 mΩ at 2.5 V. These values are 32 % and 25 % higher, respectively, than the SiA975DJ.

The compact 2-mm by 2-mm footprint of the SiA975DJ’s PowerPAK SC-70 package is half the size of the TSOP-6, while offering comparable on-resistance. 100 % Rg tested, the MOSFET is halogen free in accordance with IEC 61249-2-21 and compliant to RoHS directive 2002/95/EC.