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N-Channel Power MOSFETs in SC-75 Package Offers 8V to 30V VDS Range

21st August 2009

Vishay

ES Admin

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Vishay has expanded its family of n-channel TrenchFET power MOSFETs in the thermally enhanced PowerPAK SC-75 package to offer a VDS range from 8 V to 30 V. The devices released today include the industry’s first 30-V device in the 1.6-mm by 1.6-mm footprint area, and a 20-V MOSFET with the industry’s lowest on-resistance.

The new 30-V SiB408DK and 20-V SiB412DK join the previously released Siliconix SiB414DK, the first 8-V single n-channel power MOSFET in the PowerPAK SC-75 footprint area. On-resistance for the SiB408DK is as low as 40 mΩ at 10 V, while the SiB412DK offers an on-resistance down to 34 mΩ at 4.5 V, which is 21 % lower than the closest competing device.

The PowerPAK SC-75 package measures 1.6 mm by 1.6 mm by 0.8 mm. This is 36°% smaller than 2-mm by 2-mm devices and 72 % smaller than widely used TSOP-6 devices, while offering similar on-resistance. For designers, the smaller size of the PowerPAK SC-75 saves space and reduces power consumption in portable electronics, allowing for increased functionality while meeting consumer expectations for battery run times.

Typical applications for the n-channel PowerPAK SC-75 power MOSFETs will include load, PA, and battery switches in portable electronics. The devices will also save space in 1/8th or 1/16th bricks compared to common 3 mm by 3 mm packages. The SiB408DK will also be used for load switching in notebook computers and netbooks.

The devices are halogen-free in accordance with IEC 61249-2-21 and are compliant with RoHS Directive. 2002/95/EC. The MOSFETS are 100 % Rg- and UIS-tested.