Home > Products > Vishay - 12 New 45 V TMBS Trench MOS Barrier Schottky Rectifiers in Power TO-220AB, ITO-220AB, and TO-263AB Packages for PV Solar Cell Bypass Protection

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Vishay - 12 New 45 V TMBS Trench MOS Barrier Schottky Rectifiers in Power TO-220AB, ITO-220AB, and TO-263AB Packages for PV Solar Cell Bypass Protection

20th June 2011

Vishay

ES Admin

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Vishay has expanded its offering of TMBS Trench MOS Barrier Schottky rectifiers with 12 new 45 V devices in three power package options that feature a wide range of current ratings from 10 A to 60 A. With extremely low forward voltage drops down to 0.33 V typical at 10 A, the rectifiers are optimized for use in solar cell junction boxes as bypass diodes for protection.

Vishay has expanded its offering of TMBS® Trench MOS Barrier Schottky rectifiers with 12 new 45 V devices in three power package options that feature a wide range of current ratings from 10 A to 60 A. With extremely low forward voltage drops down to 0.33 V typical at 10 A, the rectifiers are optimized for use in solar cell junction boxes as bypass diodes for protection.
The devices released today include the dual-chip V(B,F)T1045CBP, V(B,F)T2045CBP, V(B,F)T3045CBP, and V(B,F)T6045CBP. Each device is offered in the power TO-220AB, ITO-220AB, and TO-263AB packages.
All rectifiers feature a maximum operation junction temperature of 150 °C and ≤ 200 °C maximum junction temperature in DC forward current without reverse bias (t ≤ 1 hour). The devices are compliant to RoHS Directive 2002/95/EC and WEEE 2002/96/EC.
The TO-263AB package offers a moisture sensitivity level (MSL) of 1, per J-STD-020, LF maximum peak of 245 °C. The TO-220AB and ITO-220AB packages feature solder bath temperatures of 275 °C maximum, 10 s, per JESD 22-B106, and are halogen-free according to the IEC 61249-2-21 definition.