Power
Power MOSFET with Industry-First 6.1 Milliohms On-Resistance in SO-8 Size Package
A power MOSFET with what is claimed to be the industry’s lowest on-resistance for a 60-V device in a package with double-sided cooling was released today by Vishay. The new SiE876DF, which comes in an SO-8 sized PolarPAK package, boasts maximum on-resistance of 6.1 milliohms at a 10-V gate drive, a 13 % improvement over the next best comparable device on the market.
The In each of these applications, the low on-resistance of the SiE876DF will translate into lower conduction losses and thus save on energy. In addition to the low conduction losses provided by its TrenchFET® silicon, the double-sided cooling provided by the PolarPAK package enables better thermal performance for high-current applications. This allows for operation with a lower junction temperature. The PolarPAK’s leadframe-based, encapsulated design also offers increased protection and reliability, in addition to simplifying manufacturing, since the die is not exposed. The device offers the same layout as other PolarPAK devices with a drain-source voltage rating under 150 V, thus simplifying PCB design. The SiE876DF is also 100 % Rg- and UIS-tested.