Vishay introduces new MOFSET

Compared with previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E cuts on-resistance by 48.2% while offering a 65.4% lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.

The company provides a broad range of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHK050N65E and other devices in the Gen 4.5 650V E Series family, the company is addressing the requirements for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.

Typical applications will include servers, Edge computing, and super computers; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.

Built on Vishay's latest energy-efficient E Series superjunction technology, the SiHK050N65E's low typical on-resistance of 0.048 Ω at 10V results in a higher power rating for applications > 6 kW. With 50V of additional breakdown voltage, the 650V device addresses 200 VAC to 277 VAC input voltages and the Open Compute Project's Open Rack V3 (ORV3) standards.

Additionally, the MOSFET offers ultra low gate charge down to 78 nC. The resulting FOM of 3.74 Ω*nC translates into reduced conduction and switching losses to save energy and increase efficiency. This enables the device to address the specific titanium efficiency requirements in server power supplies or reach 96 % peak efficiency.

For improved switching performance in hard-switched topologies such as PFC and two-switch forward designs, the MOSFET released recnetly provides low typical effective output capacitances Co(er) and Co(tr) of 167 pF and 1119 pF, respectively. The device's resulting resistance times Co(er) FOM is an industry-low 8.0 Ω*pF. The SiHK050N65E is offered in the PowerPAK 10 x 12 package with a Kelvin connection for reduced gate noise and provides increased dv/dt ruggedness. RoHS-compliant and halogen-free, the MOSFET is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.