‘Unique’ cascade circuit drives SiC FETs performance

These SiC FETs, in the 7-lead D2-PAK surface mount package, are based on a unique cascode circuit configuration and feature excellent reverse recovery.

In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The devices offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive.

They are ESD protected and provide package creepage and clearance distance of >6.1mm.

The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction.

They are available in 1200V and 650V drain-source breakdown voltage variants.

Applications for the UF3C SiC FETs include telecom and server power, industrial power supplies, power factor correction modules, motor drives, and induction heating.