UltrasCMOS FET driver enables next-generation applications
Richardson RFPD is now offering availability and full design support capabilities for a new UltraCMOS FET driver from Peregrine Semiconductor. The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as GaN Systems’ E-HEMT (enhancement-mode high electron mobility transistor) gallium nitride FETs.
The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33MHz.
High switching speeds result in smaller peripheral components and enable new applications like the Rezence wireless power transfer standard from A4WP (now part of the AirFuel Alliance).
The FET driver is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
According to Peregrine, additional key features of the PE29100 include: high- and low-side FET drivers; dead-time control; a fast propagation delay of 8ns and tri-state enable mode. The device also features sub-nanosecond rise and fall time, 2A/4A peak source/sink current and it comes in a flip chip package
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