Toshiba Launches new high performance LGA Package

21st September 2012

Toshiba

ES Admin

0 0

Toshiba has announced a series of low ON-resistance MOSFETs in the new high-performance UDFN6 package. This compact 2x2mm2 LGA package with power dissipation levels of 1Watt enables the combination of high current operation with small footprint that is increasingly demanded in mobile applications. With the features and functionalities added to current handheld devices, battery lifetime and recharging time are of increasing interest.

This leads to the requirement for high performance single- and dual-channel MOSFETs in small packages that are utilized in power management, charging and protection circuits.

The UDFN6 MOSFET line-up consists of single and dual p- and n-channel devices. The p-channel line-up is developed with a focus on charger and load switch applications and the n-channel line-up has a focus on battery protection and wireless charging circuits. The single MOSFET devices support maximum drain current up to 12A and the dual MOSFET are specified up to a maximum current of 4A. Using Toshiba’s UMOS-VI technology the latest single p-channel device SSM6J505NU achieves an RDS(on) of 61m (max) with a switching voltage VGS of only 1.2V. Depending on application requirements the designer can choose from a p-channel line-up that features ON resistance values between 12 and 95m (@Vgs=4.5V) and input capacitance values between 290 and 2700pF as well as an n-channel line-up with ON resistance values between 26 and 64m (@Vgs=4.5V) and input capacitance values between 270 and 620pF. Based on the target applications the maximum drain voltage rating is up to 20V for the p-channel and 30V for the n-channel line-up.

The single and dual p-channel devices come with part numbers SSM6JxxxNU and SSM6PxxNU, respectively, and the n-channel versions are numbered SSM6KxxxNU for single and SSM6NxxNU for the dual types. (XXX and XX denotes the serial number).

Additionally, the new UDFN6 package is utilized for other high performance devices such as MOSFET+Schottky Barrier Diode or MOSFET + Bipolar Transistor combinations.