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Toshiba announces new 60V-2.5A n-channel MOSFET for battery voltage boosting

26th May 2010

Toshiba

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Toshiba Electronics Europe (TEE) has introduced a 60 Volt semi-power MOSFET within its line-up of small signal MOSFET (S-MOS) devices. The new SSM3K318T is ideally suited for battery voltage boosting in white light emitting diode (LED) backlight applications. The common load switching application in portable devices can be operated from the battery voltage with low voltage MOSFETs of 20V maximum rating. However for LED backlighting applications with series connection of white LEDs, voltages need to be boosted to higher levels leading to maximum drain-source voltage requirements of 60V. With a maximum drain current rating of 2.5A the small size Toshiba SSM3K318T n-channel power MOSFET is well suited to boost a battery voltage to the level needed to turn on LED arrays, with both high speed switching and high efficiency.

The SSM3K318T features an ON-resistance of 83.5 mW (typ.) at VGS = 10V, and low capacitance of 235 pF at VDS = 30V. Low RDS(ON) and capacitance increase switching speed and efficiency resulting in longer battery life for portable applications. In addition the 60V rating makes this MOSFET the ideal solution for industrial and telecommunication applications.

Toshiba's broad selection of low ON-resistance semi-power MOSFETs is suitable for load switch and DC voltage conversion in portable electronics equipment. The MOSFETs are designed to save space while meeting designers' requirements.

The SSM3K318T is available in a compact TSM package that measures 2.9mm x 2.8mm x 0.7mm.