Toshiba launches 1,200V silicon carbide (SiC) MOSFET

The new TW070J120B power MOSFET is based upon SiC, a new wide bandgap material that allows devices to deliver high voltage resistance, high-speed switching, and low On-resistance when compared to conventional MOSFETs and insulated gate bipolar transistor (IGBT) products based upon silicon (Si). As a result, the new MOSFET will make a significant contribution to reduced power consumption and improved power density, leading to opportunities for system downsizing.

Fabricated with Toshiba’s second-generation chip design, the new SiC MOSFET offers enhanced reliability. Additionally, the TW070J120B realises low input capacitance (CISS) of 1680pF (typ.), a low gate-input charge (Qg) of 67nC (typ.), and a drain-to-source On-resistance (RDS(ON)) of just 70mΩ (typ.).

When compared with a 1,200V silicon IGBT such as Toshiba’s GT40QR21, the new device reduces turn-Off switching loss by approximately 80% and switching time (fall time) by around 70%, while delivering low On-voltage characteristics with a drain current (ID) of up to 20A.

The gate threshold voltage (Vth) is set high (in the range 4.2V to 5.8V), which reduces the possibility of unintended or spurious turn On or Off. Furthermore, incorporation of a SiC Schottky barrier diode (SBD) with a low forward voltage (VDSF) of just -1.35V (typ.) also helps to reduce losses.

Housed in a TO-3P(N) package, the new TW070J120B MOSFET will enable the design of higher efficiency power solutions, especially in industrial applications, where the increased power density will also contribute to reduced equipment size and weight.

Shipments of the new device start today.