Toshiba Electronics launches high-performance power MOSFETs for applications to 650V and 20A

In creating the new power MOSFETs Toshiba has combined advanced packaging technology with the latest Π-MOS VII semiconductor processes. The result is a range of devices that offer improved thermal dissipation and power cycling characteristics, reduced gate charge (Qg) and capacitance, improved on resistance (RDS(ON)) and better cost/performance ratios when compared with previous generations of devices. In addition, the avalanche durability of all of the MOSFETs is guaranteed.

Toshiba’s TK series MOSFETs are available in fully isolated TO220SIS packaging and conventional TO-3P(N) package formats. Dimensions are 10mm x 15mm x 4.5mm and 15.9mm x 20mm x 5mm respectively. All of the TO220SIS devices feature Toshiba’s ‘Warp’ packaging, which uses copper connectors rather than wire bonding. This lowers the resistance of internal connections, improves heat dissipation and supports the handling of higher currents.

Models in the new series offer voltage options of 450V, 500V, 525V, 550V, 600V and 650V and drain currents from 2A to 20A. RDS(ON) ratings range from 5Ω down to just 0.27Ω.