Toshiba Electronics expands power MOSFET range with surface-mount devices rated to 600V

The new power MOSFETs combine the compact DPAK form factor with Toshiba’s Π-MOS VII semiconductor process. The result is a range of devices that offer high efficiency , fast switching characteristics, reduced gate charge (Qg) and capacitance, improved on resistance (RDS(ON)) and better cost/performance ratios when compared with previous generations of devices. In addition, the avalanche durability of all of the MOSFETs is guaranteed.

Offering a VDSS voltage rating of 500V, the TK3P50D, TK4P50D, TK5P50D and TK7P50D have current ratings (ID) of 3A, 4A, 5A and 7A respectively. The TK5P53D and TK6P53D are rated to 525V and offer respective current ratings of 5A and 6A. At the 500V voltage level the TK3P55DA, TK4P55DA and the TK4P55 D deliver respective currents of 2.5A, 3.5A and 4A. Respective current ratings for the 600V TK2P60D, TK4P60DA and TK4P60DB are 2A, 3.5A and 3.7A.

Maximum on resistance (RDS(ON)) ratings range from just 1.22Ω to 4.3Ω depending on the device chosen.