Toshiba - DPAK+ MOSFETs for automotive applications - New MOSFET technology delivers improved performance and reliability in pin-to-pin compatible packaging

Toshiba’s new automotive MOSFET line-up comprises 11 n-channel devices offering a choice of maximum voltage ratings of 40V, 60V and 100V, and 10 p-channel parts with maximum voltage ratings of -40V and -60V. Current ratings range from ±8A to ±80A depending on the device chosen. All of the MOSFETs are designed to operate in automotive environments with channel temperatures of up to 175ºC.

The DPAK+ package has the same form factor as – and is pin-to-pin compatible with – a conventional DPAK package. However, a proprietary internal design reduces on resistance and thermal losses and ensures improved efficiency, current handling and reliability when compared with conventional DPAK alternatives.

Based on Toshiba’s proven ‘WARP’ technology, DPAK+ replaces conventional internal aluminium bondwires between the MOSFET die and the package leads with wider copper clamps. The clamping mechanism maintains a highly reliable mechanical connection capable of withstanding repeated power cycling as well as exposure to shock and vibration. In addition, the larger cross-sectional area, combined with higher electrical connectivity, minimises I2R heating due to package losses and reduces package inductance. This, in turn, contributes to heat reduction, lower noise and faster device operation.

MOSFETs in the new DPAK+ automotive family have low leakage currents and ultra-low on resistances as low as 2.4mΩ (typical, VGS = 10V). Typical thermal resistance between channel and case is only 1.5º/W, while power dissipation at 25ºC is just 100W.