Toshiba's Latest 600V Super Junction MOSFETs Combine Leading RDS(ON)

The new TK16A60W5, TK31J60W5 and TK39J60W5 achieve significant improvements in power efficiency by combining the industry’s leading RDS(ON)*A (ON-resistance area) characteristics with reverse recovery times. In addition, the use of a single epitaxial process ensures only small increases in ON resistance and recovery times at high temperatures.

The TK16A60W5 is supplied in a TO-220SIS package. Maximum current rating is 15.8A and RDS(ON) is 0.23Ω. The diode shows an excellent typical reverse recovery time of 100ns. In comparison, the standard version shows a trr of 280ns. Both the TK31J60W5 and TK39J60W5 are supplied in a TO-3P(N) package and have maximum currents of 30.8A and 38.8A respectively. Maximum respective RDS(ON) ratings (VGS = 10V) are just 0.099Ω and 0.074Ω . Typical trr diode characteristics are 135ns and 150ns. Variants in TO-247 packaging are scheduled to be available by autumn 2013.

Super junction MOSFETs offer ultra-low ON resistance without power loss penalties. Using Toshiba's state-of-the-art single epitaxial process, the fourth generation super junction 600V DTMOS IV MOSFET series provides a 30% reduction in RDS(ON)•A - a figure of merit for MOSFETs - compared to its predecessor, DTMOS III. A reduction in RDS(ON)•A, makes it possible to house lower resistance chips in the same packages, helping to improve the efficiency and reduce the size of power supplies.