SuperGAN FETs design outperforms silicon

The latest generation of Transphorm's FETs, SuperGaN FETs are normally-off devices that enable AC-DC bridgeless totem-pole PFC designs.

These FETs combine a high-voltage gallium nitride (GaN) high electron mobility transistor (HEMT) with a low-voltage silicon MOSFET to offer exceptional reliability and performance.

The Gen IV SuperGaN platform comes with advanced epitaxial and patented design technologies that simplify manufacturability.

This design technology also improves efficiency over silicon, offering a low gate charge, output capacitance, crossover loss, and reverse recovery charge.

The Gen IV SuperGaN FETs are available in a three-lead TO-247 package (TP65H035G4WS) or an 8x8 PQFN package (TP65H300G4LSG).