STMicroelectronics Reinforces Leadership in Ultra-Efficient MOSFETs with Extra Super-Junction Device Supporting Industry’s Lowest On-Resistance Per Die Area

“The MDmesh V family combines proprietary fifth-generation super-junction technology with our proven PowerMESH horizontal layout, giving superior performance compared to the competing devices,” said Maurizio Giudice, Marketing Director, Power MOSFET Division, STMicroelectronics. “The industry’s lowest RDS(ON) per die area delivers efficiency advantages in any package style. Designers can use this superiority to improve performance and reduce overall size by replacing multi-parallel networks of conventional MOSFETs with a far smaller number of MDmesh V devices.”

The new device is the STW77N65M5, which offers an RDS(ON) of 38mOhm in the TO-247 package. ST also plans to introduce the STY112N65M5 with RDS(ON) of 22mOhm in the Max247 package during 2010. These devices were unveiled as part of ST’s roadmap at the launch of its MDmesh V super-junction MOSFET technology earlier this year. The STW77N65M5 is rated for 69A maximum current and is in full production now.

ST’s MDmesh V technology delivers the lowest on-state resistance per unit area compared to conventional MOSFETs and competing super-junction devices. Benefits of this superior low-loss performance include increased efficiency, higher power density and lower operating temperatures leading to better reliability in applications such as PC and server power supplies, solar-power converters, welding power supplies and UPS equipment, where conduction loss has a major influence over efficiency.

While emphasizing ultra-low on-state resistance, the devices also achieve low switching losses, thereby enabling an overall efficiency boost across a wide range of applications and operating conditions. MDmesh V power MOSFETs are available in popular industry-standard package styles including TO-220, TO-220FP, I2PAK, D2PAK , DPAK and IPAK.