Power
STMicroelectronics Unveils Breakthrough Power Package Extending Power-Density Advantage of MDmesh V MOSFETs
STMicroelectronics has increased the power density achievable with its latest generation MDmesh V power MOSFET technology by introducing an advanced high-performance power package.
The The new package’s compact form factor and high thermal performance, combined with the unequalled low RDS(ON) per die area of ST’s MDmesh V technology, maximize power density and reliability to save PCB space. ST will add MOSFETs in the PowerFLAT 8x8 HV to its existing MDmesh V portfolio, and today announced the first of these: the 650V STL21N65M5.
“Our fruitful co-operation with Infineon has produced a high-performance package allowing customers to benefit from cutting-edge design in a footprint supported by two major global power-semiconductor suppliers,” said Maurizio Giudice, Marketing Director, Power Transistor Division, STMicroelectronics. “Our new MOSFETs combining this package breakthrough with our unique MDmesh V process technology, which is the most advanced in the industry, will deliver the highest power density and efficiency among devices of comparable voltage rating.”
Major features of STL21N65M5:
* RDS(ON): 0.190 Ohms
* Maximum rated current (ID): 17A
* Junction-to-case thermal resistance (Rthj-c): 1.0 degrees C/W