Slashing costs and shrinking footprints
A deeply integrated intelligent power module for 600V applications has been launched by Vincotech. The flowIPM 1B CIP 600V features the combination of a high speed F5 IGBT with the switching performance of a MOSFET and a silicon carbide boost diode in the PFC circuit optimised for frequencies up to 150kHz.
The high speed F5 IGBT, paired with the silicon carbide boost diode in the PFC circuit, drives down the cost of external passive components. The current rating of this new CIP (converter + inverter + power factor correction) topology housed in an integrated power module is 10A @ 80°C heatsink temperature.
The deeply integrated flowIPM 1B CIP 600V module enables manufacturers to slash their overall system’s size, cost and time to market. It also features an inverter gate drive with a bootstrap circuit for high side power supply, as well as emitter shunts (30 mΩ) for vastly improved motion control.
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