SiC power devices accelerate automotive electrification

ST is among the first to present next-gen rectifiers and MOSFETs for high-voltage power modules and discrete solutions addressing all the vehicle’s main electrical blocks. These include the traction inverter, on-board battery charger and auxiliary DC/DC converter.

Today’s power modules typically rely on standard silicon diodes and IGBTs. SiC is a newer, wide-bandgap technology that allows smaller device geometries capable of operating well above the 400V range of today’s electric and hybrid drivetrains. The smaller SiC diode and transistor structures present lower internal resistance and respond more quickly than standard silicon devices, which minimise energy losses and allow associated components to be smaller, saving even more size and weight.

Mario Aleo, Group Vice President and General Manager, Power Transistor Division, STMicroelectronics, commented: “Major carmakers and automotive Tier-1s are now committing to silicon-carbide technology for future product development to leverage its higher aggregate efficiency compared to standard silicon in a wide range of operating scenarios. Our SiC devices have demonstrated superior performance and reached an advanced stage of qualification as we support customers preparing to launch new products in the 2017 timeframe.”

ST has been among the first companies to produce silicon-carbide high-voltage MOSFETs, with its first 1,200V SiC MOSFET introduced back in 2014, achieving industry-leading +200°C rating for more efficient and simplified designs.

The company is using the industry’s most advanced processes to fabricate SiC MOSFETs and diodes on 4" wafers. In order to drive down the manufacturing costs, improve the quality and deliver the large volumes demanded by the auto industry, ST is scaling up its production of SiC MOSFETs and diodes to 6" wafers and is on schedule to complete both conversions by the end of 2016.

ST has already qualified its 650V SiC diodes to AEC-Q101 and will complete qualification of the latest 650V SiC MOSFETs and 1,200V SiC diodes in early 2017. The qualification of the next-gen 1,200V SiC MOSFETs will be completed by the end of 2017.

The STPSC20065WY 650V SiC diode is in full production now in DO-247. The range also includes lower current ratings and smaller form-factor TO-220 package options. The STPSC10H12D 1,200V SiC diode is sampling now to lead customers in the TO-220AC package and goes to production this month, with volume production of the automotive-grade version planned for Q4 2016. Multiple current ratings from 6 to 20A and packaging options will also be available.

The SCTW100N65G2AG 650V SiC MOSFET is sampling now to lead customers in the HiP247 package. It will ramp up in volumes in H1 2017. To enable more compact designs, a 650V SiC MOSFET in the surface-mount H2PAK will also be qualified to AEC-Q101 in H1 2017.