SiC MOSFETs meet high temperature environments
Designed for faster switching, high temperature power conversion topologies and systems, a silicon carbide (SiC) MOSFET from TT Electronics has a maximum junction temperature of 225°C. The package has a higher ambient temperature capability and can therefore be used in applications, including distribution control systems with greater environmental challenges, such as those in close proximity to a combustion engine, says the company.
The 25A, 650V rated SML25SCM650N2B is supplied in a high power dissipation, low thermal resistance, fully hermetic, ceramic SMD1 package, which is claimed to ensure faster switching and low switching losses in comparison to normal Si type MOSFETs. As a result, the size of the passive components in the circuit can be reduced to save weight and space. The N-channel MOSFET features a total power dissipation of 90W at a TJ temperature of 25°C.
A range of screening options are available.
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