SiC MOSFETs halve on-resistance

Third-generation SiC MOSFETS from Rohm Semiconductor reduce on-resistance by 50% across the entire temperature range and input capacitance by 35% in the same chip size compared with planar gate-type SiC MOSFETs. They can enable a reduction in size of peripheral components such as coils and capacitors by increasing switching frequency. As a result, explains the company, conversion efficiency is improved, contributing to miniaturisation, weight reduction, and greater energy efficiencies. The MOSFETs are supplied in a TO-247 package.

At electronica 2016, the company also announced third generation SiC Schottky barrier diodes (SBDs) with what is claimed to be the lowest forward voltage (V_F) and lowest reverse leakage current (l_R) over the entire temperature range. The TO220AC devices feature high surge current capability for power supply applications. Device options are 650V/6.0, 8.0 and 10A, in D2PAK and TO220FM packages. The company has also added lower current options of 2.0 and 4A. The diodes exhibit ultra-short reverse recovery time compared with silicon-based devices, claims the company, making them particularly suitable for high-speed switching.

SiC modules now available from the company include chopper type modules for converters integrate both, mass-produced Trench SiC MOSFETs and SiC SBDs. In addition to two-inone type modules, 1200V/120A,180A and 300A Chopper type modules are being prepared. The company is also developing a power module which has lower stray inductance.