SiC MOSFETs geared to meet future power density needs

Based on silicon-carbide (SiC) technology, these power discretes are able to push the performance envelope.

The N-Channel MOSFETS support accelerated switching speeds (with rise times of as little as 10ns).

Exhibiting on-resistance figures going down to 20mΩ alongside industry-leading gate charge values, they are subject to minimal power losses.

Exceptionally robust, these devices can cope with ultra-high current surge pulses.

They have a dielectric breakdown field strength that is an order of magnitude greater than for equivalent silicon MOSFETs, with a working temperature range of -55°C to +175°C being covered.

The 1200V SiC MOSFET devices are supplied in compact TO247 packages and surface mount D2PAK. They are Pb−free and fully conform with RoHS environmental directives, as well as being 100% UIL tested. Key applications include uninterruptible power supplies (UPS), electric vehicle charging stations, DC/DC converters, motor control systems, and solar inverters. AEC Qualified variants available.

The N-channel SiC MOSFETs are shipping now from RS in the EMEA and Asia Pacific regions.