SiC MOSFETs are available in 650V or 1200V

The six new trench gate structure SiC MOSFETs, available in 650V or 1200V, are ideal for server power supplies, UPS systems, solar power inverters, and EV charging stations requiring high efficiency.

The SCT3xxx xR series utilises a 4-pin package (TO-247-4L) that maximizes switching performance, making it possible to reduce switching loss by up to 35% over conventional 3-pin package types (TO-247N).

This contributes to lower power consumption in a variety of applications.

With conventional 3-pin packages (TO-247N), the effective gate voltage at the chip reduces due to the voltage dropped across the parasitic inductance of the source terminal.

This causes the switching speed to reduce.

Adopting the 4-pin TO-247-4L package separates the driver and power source pins, minimizing the effects of the parasitic inductance component.

This makes it possible to maximise the switching speed of SiC MOSFETs, reducing total switching loss (turn ON and turn OFF) by up to 35% over conventional package.