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Vishay Siliconix 20-V P-Channel TrenchFET MOSFET Offers Industry’s Lowest On-Resistance

24th November 2009

Vishay

ES Admin

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Datasheet

Vishay today introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK SC-70. The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET nearly in half.

The SiA433EDJ offers an ultra-low on-resistance of 18 mΩ at 4.5 V, 26 mΩ at 2.5 V, and 65 mΩ at 1.8 V. These values are 40 % lower at 4.5 V and 30 % lower at 2.5 V than the closest competing p-channel device.

The new MOSFET is also the only 20-V device with both a gate-source voltage of 12 V and an on-resistance rating at 1.8 V. This allows it to be used in applications that encounter higher gate-drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safer designs in applications with smaller input voltages.

The SiA433EDJ will be used as load, battery, and charging switches in handheld devices such as cell phones, smart phones, PDAs, and MP3 players. The low on-resistance of the MOSFET translates into lower conduction losses, saving power and prolonging battery life between charges in these devices. At half the size of the TSOP-6, and offering similar on-resistance, the SiA433EDJ compact PowerPAK SC-70 package saves space for other product features or to enable smaller end products.

To reduce field failures due to ESD, the device features a built-in Zener diode for ESD protection up to 1800 V. The MOSFET is halogen free in accordance with IEC 61249-2-21, compliant to RoHS Directive 2002/95/EC, and 100 % Rg-tested.