Vishay's E Series Power MOSFET SIHD180N60ET4-GE3 is now available in large quantities from Rutronik.
These high-performance MOSFETs are distinguished by their low drain-source on-state resistance (RDS(on)) of 0.17 Ω, low input capacitance (CISS) of 1,080 pF, and minimal switching and power losses. Designed to withstand high operating temperatures, these robust components are ideal for use in industrial applications, power supplies, renewable energy systems, lighting, and telecommunications.
Incorporating the advanced technology of Vishay's 4th generation E Series Power MOSFETs, these components also feature a low effective output capacitance of 39 pF and an excellent figure-of-merit (FOM) Ron x Qg. Their design makes them particularly suited for high-temperature applications such as switching power supplies, battery chargers, photovoltaic inverters, and fluorescent lamps with ballasts.
These components are lead-free and comply with RoHS standards.