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ROHM Semiconductor Presents Its New High Voltage Isolated SiC Gate Drivers

20th June 2012

ES Admin

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ROHM Semiconductor presents its new BM6 family of 2,500 Vrms isolated SiC gate drivers facilitating low-power consumption and small designs. Due to their characteristics, these devices are ideal for the control of inverters and DC/DC converters for solar and automotive applications. Due to their electrical characteristics and high output voltage, they can drive both IGBTs and SiC MOSFETs. Together with ROHM’s SiC devices the new series guarantees a stable, high speed operation even in high power regions.

In order to develop on-chip transformer processes, ROHM utilized its proprietary microfabrication expertise. The unique design reduces the size to a compact SSOP-B20W package while eliminating the need for external parts, cutting the mounting area by approximately 50% compared to conventional products. Moreover, the original core-less transformer technology integrates an isolation function ensuring an isolation voltage of 2,500 Vrms.

In addition, multiple protection functions such as thermal shut-down and short circuit protection supporting desat function , fault and load control are included for high reliability, decreasing design effort while further contributing to miniaturization. A soft turn-off function deactivates the inverter in case of desaturation.

Specifications of BM6103FV-C:

Input voltage (Vcc1): min. 4.5V – max. 5.5V
Output voltage (Vcc2): min. 12V – max. 24V
Output VEE Voltage (VEE2): min. -12V – max. 0V
Operating temperature range (Ta): min. -40° - +125°
Rated output current (peak): 5.0A
Isolation voltage: 2,500 Vrms
Input/output delay time: 400ns
Package: SSOP-B20W (6.5mm x 8.1mm, H=2.01mm max.)

Availability
Samples are already available, mass production is scheduled for September 2012.