ROHM's new ecogan power stage ICs contribute to smaller size and lower loss

Consumer and industrial sectors more and more demand greater energy savings to achieve a sustainable society in the last few years. However, while GaN HEMTs are expected to significantly contribute to greater miniaturisation and improved power conversion efficiency, the difficulty in handling the gate compared to silicon MOSFETs requires the use of a dedicated gate driver. In response, ROHM developed power stage ICs that integrate GaN HEMTs and gate drivers into a single package by leveraging core power and analogue technologies, facilitating mounting considerably.

On top, the BM3G0xxMUV-LB series (BM3G015MUV-LB, BM3G007MUV-LB) incorporates additional functions and peripheral components designed to maximise GaN HEMT performance along with 650V GaN HEMTs - the next generation of power devices. And ROHM's features such as a wide drive voltage range (2.5V to 30V) enable compatibility with virtually any controller IC in primary power supplies - facilitating replacement of existing silicon (Super Junction) MOSFETs. This makes it possible to simultaneously reduce component volume and power loss by approx. 99% and 55%, respectively, achieving higher efficiency in a smaller size.

ISAAC LIN, General Manager, PSADC (Power Semiconductor Applications Development Center), Delta Electronics, says: "GaN devices are attracting a great deal of attention in the industries as a  device that greatly contributes to the miniaturisation and energy saving of equipment.

ROHM's new products have realised high speed and safe gate drive by using ROHM's original analogue technology. These products will further promote the use of GaN power devices, which are expected to grow."