ROHM MOSFETs Handle Reduced Supply Voltages in Portables

ROHM’s advanced proprietary processing has produced devices that exhibit RDS(ON) values as much as 90% lower than comparable devices when operated at ultra-low 1.5 V or 1.2 V gate drive (VGS) voltages. This improved electrical performance combined with ROHM’s unique packaging design provides both high-efficiency, excellent power dissipation and small device footprint.

The new ECOMOS 1.5 V products are offered in three package sizes, depending on maximum power dissipation (PD), in configurations that include single P-channel or N-channel devices (with or without Schottky barrier diode) and complex, multi-die dual P-channel or N-channel devices.
ROHM Semiconductor’s Field Application Engineering Manager, Kevin Turchin, said: ”As a leader in semiconductor fabrication technology, ROHM Semiconductor designs and manufactures our own equipment and processes. The advanced fabrication techniques we developed for ECOMOS have resulted in dramatic improvement in RDS(ON), particularly when low gate drive voltages are required. This process has also yielded parts with reduced die size, which makes it possible to offer devices in smaller, lower-profile packages.“