SiC MOSFET suited for boost converters
Richardson RFPD is offering the new 1200V, 32A, 80mΩ SiC MOSFET from Microsemi with full design support capabilities. The APT40SM120J is built on Microsemi's patented SiC MOSFET technology, which features best-in-class RDS(on) vs. temperature. It also features ultra-low gate resistance for minimising switching energy loss, superior maximum switching frequency, and outstanding ruggedness with superior short circuit withstand.
The device is ideally suited for PFC and other boost converters, buck converters, two switch forward (asymmetrical bridge) converters, single switch forward converters, flyback converters, inverters, and other high-voltage industrial applications.
Other key features of the APT40SM120J include: Drain-source breakdown voltage (V(BR)DS): 1200V; Continuous drain current (ID @ TC = 25 ºC): 32A; Continuous drain current (ID @ TC = 100 ºC): 23A;Drain-source on resistance (RDS(on) @ TJ = 25 ºC, VGS = 20V, ID = 20A): 80mΩ.
The device comes in a SOT-227 package
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