Power Z-FET boosts system switching reliability
Richardson RFPD is now offering availability and full design support capabilities for a new silicon carbide power Z-FET from Cree. The C2M0040120D is a 1200V, 40mOhm RDS(on) SiC MOSFET that features N-channel enhancement mode and is available in a TO-247-3 package. Benefits of the device include higher system efficiency, reduced cooling requirements, and increased system switching frequency and reliability.
It is ideally suited for solar inverter, switch-mode power supply, high-voltage DC/DC converter, and motor drive applications.
According to Cree, additional key features of the new SiC MOSFET include: continuous drain current (ID); 60A (@ 25ºC); 40A (@ 100ºC); high-speed switching with low capacitances; high blocking voltage with low RDS(on); easy to parallel and simple to drive; and resistant to latch-up
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