30W GAN on SIC HEMT operates from DC to 3.5GHz
A new discrete GaN on SiC HEMT from TriQuint / Qorvo is now being shipped by Richardson RFPD with full design support capabilities. The 30W (P3dB) T2G4003532 operates from DC to 3.5GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimise power and efficiency at high drain bias operating conditions.
This optimisation can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
The new device is suitable for military and civilian radar, professional and military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications. It is available in flanged (T2G4003532-FL) and flangeless (T2G4003532-FS) low thermal resistance packages.
Key features of the T2G4003532 include: output power (P3dB): 28W at 3.5GHz; linear gain: >16dB at 3.5GHz; and operating voltage of 32V.
Evaluation boards are available for the T2G4005528-FS tuned to 2.7–3.5GHz for S-band radar and tuned to 1.0–1.4GHz for L-band radar.
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