RF power transistor delivers 20dB typical gain
The MAGX-000912-650L0x is a gold-metalised, matched gallium nitride on silicon carbide RF power transistor from MACOM, that is optimised for civilian and military pulsed avionics amplifier applications in the 960 MHz to 1215 MHz range, such as Mode-S, TCAS, JTIDS, DME and TACAN.
The transistor provides high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions.
The new HEMT is available in a standard flange package (MAGX-000912-650L00) and an earless flange package (MAGX-000912-650L0S).
According to MACOM, additional key features of the MAGX-000912-650L0x include: GaN on SiC depletion-mode transistor technology, common-source configuration, broadband Class AB operation, 50V operation, and 800W performance at 20μs and 6% duty factor
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