RF Micro Devices Unveils rGaN-HV Process Technology For Power Device Products And Foundry Customers

RFMD’s rGaN-HV delivers device breakdown voltages up to 900 volts, high peak current capability, and ultra-fast switching times for GaN power switches and diodes.

The new technology complements RFMD’s GaN 1 process, which is optimized for high power RF applications and delivers high breakdown voltage over 400 volts, and RFMD’s GaN 2 process, which is optimized for high linearity applications and delivers high breakdown voltage over 300 volts. RFMD will manufacture discrete power device components for customers in its Greensboro, NC, wafer fabrication facility (fab) and provide access to rGaN-HV to foundry customers for their customized power device solutions.

Bob Bruggeworth, president and chief executive officer of RFMD, said, “The global demand for energy savings through improved power conversion efficiency is creating a tremendous opportunity for high-performance power devices based on RFMD’s GaN power process technologies. We expect our newest GaN power process will expand our opportunities in the high-voltage power semiconductor market, and we are pleased to provide access to rGaN-HV to our external foundry customers to support their success in the high-performance power device market.”

RFMD’s Power Conversion Devices Product Line and Foundry Services Business Unit will exhibit a broad portfolio of GaN technologies and GaN power products at the PCIM Power Industry Conference, May 8-10, in Nuremberg, Germany.