Renesas Electronics Introduces Power Semiconductor Devices Capable of Reducing Mounting Area by Half

The new power semiconductor products each integrate a pair of power MOSFETs (Note 2) into a single package, enabling designs of DC/DC converters that are more compact with higher mounting density. The compact, low-loss 11th generation power MOSFETs, fabricated using an advanced process, (1) are contained in an ultra-compact package measuring only 3.2 millimeters (mm) × 4.8 mm × 0.8 mm (max.), making it possible to reduce the mounting area by about half compared with previous Renesas Electronics power MOSFET products, and (2) deliver efficiency of 95.2 percent, the top level in the industry, which contributes to reduced power consumption.

Information and telecommunication devices such as base stations, notebook PCs, servers, and graphics cards require multiple step-down DC/DC converters because they incorporate components, such as CPUs, GPUs, memory devices, and ASICs, that require a power supply voltage lower than that supplied by the battery. As demand grows for information devices that are smaller and more streamlined, so the need grows for DC/DC converters that are more compact, thinner, and more highly efficient.

In response to this demand, Renesas Electronics has developed the two power devices, each of which integrates a pair of power MOSFETs in an ultra-compact package. The designs benefit from the company’s expertise in smaller package development and higher heat-radiation packages developed through Renesas Electronics’ ultrafine power MOSFET technology.

Main features of the new products are as follows.

(1) Approximately half the mounting area, enabling more compact, high-density power supply designs

A pair of power MOSFETs used for voltage conversion is mounted on Renesas Electronics’ ultra-compact package (package code HWSON3046) with mounting area of 3.2 mm × 4.8 mm. The mounting area is about half that of Renesas Electronics’ existing package of 5.1 mm × 6.1 mm (package code WPAK), making it possible to design DC/DC converters that are more compact and have a higher mounting density.

(2) High efficiency among the best in the industry for reduced power consumption of power supplies

At a switching frequency of 300 kilohertz (kHz), the Renesas Electronics 11th generation low-loss power MOSFETs achieve a maximum efficiency of 95.2 percent (input voltage: 12 volts (V), output voltage: 3.3 V), which is at the top level in the industry and contributes to improved overall power supply efficiency.

Within the pair of power MOSFETs used for voltage conversion, the one used for synchronous rectification (low-side) incorporates an on-chip Schottky barrier diode. During the DC/DC converter’s dead time (Note 3), the faster current switching time from the power MOSFET to the Schottky barrier diode reduces power loss. In addition, it effectively suppresses the spike voltage when the power MOSFET switches on, reducing the electromagnetic noise.

Like Renesas Electronics’ existing WPAK package, the new HWSON3046 package provides excellent heat radiation and has a die pad on the bottom of the device that allows heat to pass to the printed wiring board while the power MOSFET is operating, enabling the power MOSFET to handle large currents.

Renesas Electronics plans to develop a full lineup of dual-chip products using the HWSON3046 package for a variety of DC/DC converter specifications.