Radiation-hardened gallium nitride transistors launched

The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

Applications benefiting from the performance and fast deployment of these products include power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning, as well as interplanetary propulsion of low-mass robotic vehicles.

The EPC7014, a 60V, 340 mΩ, four APulsed, rad-hard eGaN FET in a tiny 0.81mm2 footprint, is the first in what will be a wide-range family of rad-hard transistors and integrated circuits. The EPC7014 has a total dose rating greater than one Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.

“EPC’s GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before” said Alex Lidow, CEO, and Co-founder of EPC. “We are excited about this technologies ability to provide mission-critical components the space and high-reliability markets”.

The EPC7014 is available for engineering sampling and will be fully qualified for volume shipments in October, 2021.