Power transistor meets radar, avionics demands
Availability and full design support capabilities for the 1011GN-1200V power transistor from Microsemi has been announced by Richardson RFPD. The 1011GN-1200V is an internally-matched, common source, class AB, GaN on SiC HEMT capable of providing over 18.5dB gain, 1200W of pulsed RF output power at 32µs, and 2% duty cycle pulse format across the 1030 to 1090MHz band.
The transistor has internal pre-match for optimal performance, and it utilises gold metallisation and eutectic attach to provide outstanding reliability and superior ruggedness.
Additional key features of the 1011GN-1200V include power gain of 20 dB (typ.), drain efficiency 75% (typ.), 50VDC supply voltage. The device comes in a 55Q03 package.
The 1011GN-1200V is part of Microsemi’s portfolio of GaN power transistors designed and optimised for radar and avionics to meet the need for smaller footprints, reduced weight, and higher power density and efficiency.
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