Power system-in-package boost efficiency

28th February 2022

Mick Elliott

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Datasheet

The latest MasterGaN2 device from STMicroelectronics is an advanced power system-in-package that integrates a gate driver and two enhancement mode GaN transistors in asymmetrical half bridge configuration.

It is available from Anglia Components.

By combining advanced integration with GaN’s inherent performance advantages, MasterGaN2 further extends the efficiency gains, size reduction, and weight savings of topologies such as active clamp flyback. MasterGaN2 is perfect for active clamp flyback circuits up to 65W.

The MasterGaN2 integrated power GaNs have 650 V drain source breakdown voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. Designers can easily connect external devices including Hall sensors and a controller such as a DSP, FPGA, or microcontroller directly to the MasterGaN device.

The inputs are compatible with logic signals from 3.3V to 15V, which helps simplify the circuit design and bill of materials, permits a smaller footprint, and streamlines assembly. This integration helps increase the power density of adapters and fast chargers, in some cases they can be up to 80% smaller and 70% lighter while charging three times faster compared to ordinary silicon-based solutions.

By integrating GaN devices and gate drivers together into the same device package STMicroelectronics MasterGaN family offers a wide range of benefits when compared with traditional silicon-based solutions including:

Higher power density – Higher switching speeds also enable reduced system size and cost.

Higher efficiency – Reduced power losses, reduced power consumption, which exceed the most stringent energy requirements.

Faster go-to-market – Packaged integrated solution simplifies the design and at the same time gives a higher level of performance.

The MasterGaN2 device features built-in protection comprising of low-side and high-side under-voltage lockout (UVLO) preventing the power switches from operating in low efficiency or dangerous conditions, gate-driver interlocks which avoids cross-conduction conditions, a dedicated shutdown pin, and over-temperature protection.