Power MOSFETs lower conduction, switching losses
With the new n-channel SiHP065N60E, distributor Rutronik presents the first device in Vishay’s fourth generation of 600V E Series power MOSFETs. This new MOSFET lowers conduction and switching losses while increasing efficiency. Thus, it is ideal for applications in telecommunication, industrial, and enterprise power systems.
Compared to previous 600V E Series MOSFETs, the new SiHP065N60E features a low maximum on-resistance of 0.065Ω at 10V, and ultra-low gate charge down to 49nC, thus slashing on-resistance by 30%, while delivering 44% lower gate charge.
The device’s FOM of 2,8Ω*nC (RDS(ON)*Qg) is 25% lower than the closest competing MOSFET in the same class.
For improved switching performance, the SiHP065N60E provides low effective output capacities Co(er) and Co(tr) of 93pF and 593pF, respectively.
These values translate into reduced conduction and switching losses to save energy in power factor correction and hard-switched DC/DC converter topologies for telecom, industrial, and enterprise power systems.
Offered in the TO-220AB package, the device is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in the avalanche mode with guaranteed limits trough 100% UIS testing.
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