Power MOSFET offers industry-low on-resistance
A 25V n-channel TrenchFET Gen IV power MOSFET that features the industry's lowest maximum on-resistance for such a device - 0.58mΩ at 10V has been released by Vishay Intertechnology. Delivering increased efficiency and power density for a wide range of applications, the Vishay Siliconix SiRA20DP offers low gate charge and gate charge times on-resistance figure of merit (FOM) for devices with on-resistance below 0.6mΩ.
Offered in the 6mm by 5mm PowerPAK SO-8 package, the device is one of only two 25V MOSFETs with maximum on-resistance below 0.6mΩ. In comparison, the SiRA20DP offers lower typical gate charge of 61nC and a 32% lower FOM of 0.035Ω*nC.
The SiRA20DP's low on-resistance minimises conduction power losses to improve system efficiency and enable higher power density, which is ideal for OR-ring functions in redundant power architectures.
The device's low FOM enhances switching performance for DC/DC conversion in telecom and server power supplies, battery switching in battery systems, and load switching for 5 V to 12 V input rails.
The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
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