Power MOSFET lowers conduction and switching losses

This results in the industry's lowest gate charge times on-resistance for devices in the same class, a key figure of merit (FOM) for 600V MOSFETs used in power conversion applications.

Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs required by the latest electronic systems.

With the SiHH068N60E and upcoming devices in the fourth-generation 600V E Series family, the company is addressing the need for efficiency and power density improvements in the first stages of the power system architecture — power factor correction and hard-switched DC/DC converter topologies.

Built on Vishay's latest energy-efficient E Series superjunction technology, the SiHH068N60E features low typical on-resistance of 0.059Ω at 10V and ultra-low gate charge down to 53nC. The device's FOM of 3.1Ω*nC is 12% lower than the closest competing MOSFET in the same class. For improved switching performance, the SiHH068N60E provides low effective output capacitances C_o(er) and C_o(tr) of 94pf and 591pF, respectively. These values translate into reduced conduction and switching losses to save energy.

Offered in the PowerPAK 8x8 package, the device is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.

Samples and production quantities of the SiHH068N60E are available now, with lead times of 10 weeks.