Power MOSFET lowers conduction and switching losses
The first device in its fourth generation of 600V E Series power MOSFETs has been introduced by Vishay Siliconix. Providing high efficiency for telecom, industrial, and enterprise power supply applications, the n-channel SiHP065N60E slashes on-resistance by 30 % compared with previous 600V E Series MOSFETs while delivering 44% lower gate charge.
This results in what is claimed to be the industry's lowest gate charge times on-resistance, a key figure of merit (FOM) for 600V MOSFETs used in power conversion applications.
Built on Vishay's latest energy-efficient E Series superjunction technology, the SiHP065N60E features low maximum on-resistance of 0.065 Ω at 10 V and ultra-low gate charge down to 49nC.
The device's FOM of 2.8Ω*nC is 25% lower than the closest competing MOSFET in the same class.
For improved switching performance, the SiHP065N60E provides low effective output capacitances Co(er) and Co(tr) of 93pf and 593pF, respectively.
These values translate into reduced conduction and switching losses to save energy in power factor correction and hard-switched DC/DC converter topologies for telecom, industrial, and enterprise power systems.
Offered in the TO-220AB package, the device released today is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100 % UIS testing.
Samples and production quantities of the SiHP065N60E are available now, with lead times of 10 weeks.
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