Power amplifier operates between DC and 8GHz
Availability and full design support capabilities for a new power amplifier from Microsemi have been announced by Richardson RFPD. The MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8GHz.
The amplifier provides 17dB of gain, +43dBm output IP3, and +31dBm of output power at 3dB compression, while requiring only 410mA from an 11V supply.
Gain flatness over the DC to 8GHz frequency range varies by only ±0.5dB, making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications.
The MMA053AA amplifier features compact die size (3mm x 2.25mm x 0.07mm) and I/Os that are internally matched to 50Ω, facilitating easy integration into multi-chip modules (MCMs).
The amplifier offers users a way to meet demanding system and module line-up requirements with minimal DC power consumption.
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