PCIM 2014: MOSFET family moves up to 650V rating

Extended voltage capability also supports improved design flexibility by increasing safe operating margins.

Toshiba’s latest 650V power MOSFETs are based on the company’s fourth generation super junction DTMOS IV deep trench process and are available in seven different compact packages. Devices can be supplied with an integrated fast recovery diode (FRD), which helps to reduce component count and board space in high frequency switching applications. Target applications for the 650V series will include switch mode power supplies, lighting ballasts, photovoltaic inverters and other designs that require a combination of high-speed operation, high efficiency and low EMI noise.

Thanks to the DTMOS IV technology, the new MOSFETs combine ultra-low on resistance with reduced die size, leading to very small form factors without power loss penalties. A strong advantage of the DTMOS IV deep trench process compared to a standard super junction process, is the lower thermal coefficient of R_DS(ON) over temperature. DTMOS IV also minimises MOSFET output capacitance (C_oss) for improved SPS operation at light load. Furthermore, an optimised gate-drain capacitance (C_gd) delivers improved dv/dt switching control.

The new 650V line-up of devices is available in D-PAK, I-PAK, D2-PAK, I2-PAK, TO-220, TO-220SIS and TO-247 package options. Maximum R_DS(ON) is from 1.2Ω down to just 0.055Ω.